Library of Congress Cataloging-in-Publication Data. Neamen, Donald A. Semiconductor physics and devices: basic principles / Donald A. Neamen. — 4th ed. Download Citation on ResearchGate | Semiconductor Physics and Devices: Basic Principles / D.A. Neamen. | Contenido: 1) Estructura cristalina de sólidos;. Results 1 – 30 of Semiconductor Physics And Devices by Donald Neamen and a great selection of related books, art and collectibles available now at.
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No part of this publication may be reproduced 01 distributed in any form or by any means, or stored in a database or retrieval system, without the prior written consent of The McGraw-Hill Xemiconductor, Inc. Some ancillaries, including electronic and print components, may not be available to customers outside the United States. This book is printed on acid-free paper.
Semiconductor Physics and Devices Basic Principles
Jones Senior developmental editor: Kelley Butcher Executive marketing manager: John Wannemacher Project manager: Joyce Waiters Production supervisor: David W Hash Cover designer: Rokusek Design Cover image: Schnee Media technology senior producer: Interactive Composition Corporation Typeface: Semiconductor physics and devices: Includes bibliographical references and index.
ISBN acid-free paper I. This book cannot be re-exported from the country to which it is sold by McGraw-Hill. The International Edition is not available in North America. Neamen is a professor emerltus in the Department of Electrical and Computer Engineering at the University of New Mexico where he taught for more than 25 years. He received his Ph. Inhe joined the faculty in the EECE department at the University of New Mexico, where he specialized in teaching semiconductor physics and devices courses and electronic circuits courses.
He is still a part-time instructor in the department. He has published many papers and is the author of Electronic Circuit Analysis and Design, 2nd edition. I Qualitative Description I15 4. I Probability Function 6. I Qualitative Characteristics 9. Additional Concepts I Generation of Light In order to gain this understanding, it is essential to have a thorough knowledge of the physics of the semiconductor material.
The goal of this book is to bring together quantum me- chanics, the quantum theory of solids, semiconductor material physics. All of these components are vital to the understanding of both the operation of present day devices and any future development in the field. The amount of physics presented in this text is greater than what is covered in many introductory semiconductor device books.
Although this coverage is more ex- tensive, the author has found that once the basic introductory and material physics have been thoroughly covered. The emphasis on the un- derlying physics will also be a benefit in understanding and perhaps in developing new semiconductor devices. Since the objective of this text is to provide an introduction to the theory of semiconductor devices, there is a great deal of advanced theory that is not consid- ered.
There are a few references and general discussions about processing techniques such as diffusion and ion implantation, but only where the results of this processing have direct im- pact on device characteristics.
Semiconductor Physics And Devices – Donald Neamen
The prerequisites for un- derstanding the physic are college mathematics. Chapter 1 presents an introduction to the crystal structure of solids, leading to the ideal single-crystal semiconductor material. Chapters 2 and 3 introduce quantum mechanics and the quantum theory of solids, which together provide the necessary basic physics.
Chapters4 through6 cover the semiconductorlnaterial physics. Chapter4 presents the physics of the semiconductor in thermal equilibrium; Chapter 5 treats the transport. The nonequilibrium excess car- rier characteristics are then developed in Chaptcr 6. Understanding the behavior of ex- cess carriers in a semiconductor is vital to the goal of understanding the device physics.
The physics of the basic semiconductor devices is developed in Chapters 7 through Chaptcr 7 treats the electrostatics of the basic pn junction. Metal-semiconductorjunctions, both rectifying and nonrectifying.
The physics of the metal- oxide-semiconductor field-effect transistor is presented in Chapters I I and Once the physics of the pn junc- tion is developed, the chapters dealing with the three basic transistors may be covered in any order-these chapters are written so as not to depend on one another. Chapter 14 considers optical devices and finally Chapter 15covers power semiconductor devices.
As with most textbooks, there is more material than can be conveniently covered in one semester; this allows each instructor some flexibility in designing the course to hislher own specific needs.
Two poshible orders of presentation are discussed later in a sepa- rate section in this preface.
However, the text is not an encyclopedia. Sections in each chapter that can be skipped without loss of continuity are identified by an asterisk in both the table of contents and in the chapter itself. These sections, althoughimportant to the development of semiconductor device physics, can he postponed to a later time. The material in the text has been used extensively in a course that is required for junior-level electrical engineering students at the University of New Mexico.
Slightly less than half of the semester is devoted to the first six chapters; the remain- der of the semester is devoted to the pn junction, thc bipolar transistor. A few other special topics may be briefly considered near the end of the semester. Any one of the transistor types may be covered first.
Although many electrical engineering students are more comfortable building electronic cir- cuits or writing computer programs than studying the underlying principles e.a.neamen semi- conductor devices, the material presented here is vital to an understanding of the limitations of electronic devices, such as the microprocessor. Mathematics is used extensively throughout the hook.
This may seniconductor times seem tedious, but the end result is an understanding that will not otherwise occur. Although some of the mathematical models used to describe physical processes may seem abstract, they have withstood the test of time in their ability to describe and predict these physical processes. The reader is encouraged to continually refer to the preview sections so that the oh- jective of the chapter and the purposes of semicinductor topic can be kept in mind.
This constant review is especially important in the first five chapters, dealing with basic physics. The reader must keep in mind that, although some sections may be skipped without loss of continuity, many instructors will choose to cover these topics.
The fact that sec- tions are marked with an asterisk does not minimize the importance of these subjects. It is also important that the reader keep in mind that there may be questions still unanswered at the end of a course. Although the author dislikes the phrase. This hook is intended as an introduction to the subject. Those questions remaining unanswered at the end of the course, the reader is cncouraged to keep “in a desk drawer.
Listed below are two devifes scenarios. The first case, called the clas- sical approach, covers the bipolar transistor before the MOS transistor.
Chapter 4 Bibliography
However, because the MOS transistor topic is left until the end of the semester. The second method of presentation listed, called the nonclassical approach, dis- cusses the MOS transistor before the bipolar transistor. Two advantages to this ap- proach are that the MOS transistor will not get shortchanged in terms of time devoted to the topic and, since a “real device” is discussed earlier in the semester, phyxics reader may have more motivation to continue studying thih course material.
Unfortunately, because of time constraints, every topic in evcry chapter cannot be covered in a one-semester course. The remaining topics must be left for a second- semester course or for further study by the reader. Chapter 1 Classical approach Chapters 2, 3 Crystal structure Chapter 4 Selectcd topics from quantum Chapter 5 mechanics and theory of solids Chapter 6 Srrniconductor physics Chapters 7, 8 Transpon phenomena Chapter 9 Selected topic, from nirnequilibriurncharacteristics Chapter 10 The pn junction and diode Chapters 11, 12 A brief discussion of the Schottky diode The bipolar transistor The MOS trilnsistor.
The words you are searching are inside this book. To get more targeted content, please make full-text search by clicking here. You can publish your book online for free in a few minutes! Discover the best professional documents and content resources in AnyFlip Document Base. Published by Azim Uddinsrmiconductor Chapter4 presents the physics of the semiconductor in thermal equilibrium; Chapter 5 treats the transport phenomena of the charge carriers in a semiconductor.